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The gate dielectric insulator in a MISFET is silicon dioxide in a MOSFET, but other materials can also be employed. The gate dielectric lies directly below the gate electrode and above the channel of the MISFET. The term metal is historically used for the gate material, even though now it is usually highly doped polysilicon or some other nonmetal.
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Metal gate Wikipedia
A metal gate, in the context of a lateral MetalOxideSemiconductor MOS stack, is just that—the gate material is made from a metal.. Polysilicon. In the late 1970s, the industry had moved away from metal (most typically aluminum, evaporated in a vacuum chamber onto the wafer surface), as the gate material in the metaloxidesemiconductor stack due to fabriion compliions.
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Why is polysilicon used as a gate contact instead of metal
Jul 27, 2018 · In the early days of semiconductor industry, the metal, Aluminum, was generally preferred for gate material of MOS. But later on, polysilicon has been preferred as gate material. Two main reasons were behind this transition to polysilicon : * Duri
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Choosing the gate that''s right for you can be difficult if you don''t know the advantages and disadvantages of each material. Keep reading to learn what you should know when considering a wood or metal gate. Metal Gates: Entries for Centuries.
Highκ dielectric Wikipedia
Need for highκ materials. Silicon dioxide (SiO 2) has been used as a gate oxide material for decades.As transistors have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to decrease the gate capacitance and
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Metal gate Wikipedia
How can the answer be improved?
Highk and Metal Gate Transistor Research
Highk and Metal Gate Transistor Research . Intel made a significant breakthrough in the 45nm process by using a "highk" (Hik) material called hafnium to replace the transistor''s silicon dioxide gate dielectric, and by using new metals to replace the N and PMOS polysilicon gate electrodes.These new materials (along with the right process recipe) reduced the NMOS gate leakage by >25X and PMOS
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Highk and Metal Gate Transistor Research
Highk and Metal Gate Transistor Research . Intel made a significant breakthrough in the 45nm process by using a "highk" (Hik) material called hafnium to replace the transistor''s silicon dioxide gate dielectric, and by using new metals to replace the N and PMOS polysilicon gate electrodes.These new materials (along with the right process recipe) reduced the NMOS gate leakage by >25X and PMOS
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